, o ne.. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 advanced power mosfet IRFZ44 features ? avalanche rugged technology ? rugged gate oxide technology ? lower input capacitance ? improved gate charge ? extended safe operating area ? 175c operating temperature ? lower leakage current: 10ua(max.) @ vds = 60v ? lower rds(on): 0.020q (typ.) bvdss : f^ds(on) = id = 50 60v 0.02412 a to-220 lgate 2. drain 3. source absolute maximum ratings symbol vdss id 'dm vgs eas iar ear dv/dt pd tj , tstg tl characteristic drain-to-source voltage continuous drain current (tc=25c) continuous drain current (tc=100c) drain current-pulsed (1) gate-to-source voltage single pulsed avalanche energy (2) avalanche current (1) repetitive avalanche energy (1) peak diode recovery dv/dt (3) total power dissipation (tc=25c) linear derating factor operating junction and storage temperature range maximum lead temp, for soldering purposes, 1/8. from case for 5-seconds value 60 50 35.4 200 20 857 50 12.6 5.5 126 0.84 -55 to +175 300 units v a a v mj a mj v/ns w w/c c thermal resistance symbol rbjc rocs rbja characteristic junction-to-case case-to-sink junction-to-ambient typ. - 0.5 - max. 1.19 - 62.5 units c/w nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by n.i semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors encourages customers to verity that datasheets are current before placing orders. quality semi-conductors
IRFZ44 n-channel power mosfet electrical characteristics (tc=25c unless otherwise specified) symbol bvdss abv/atj ^gs(th) 'gss 'dss ros(on) 9f? ciss c0ss crss 'd(on) tr td(off) tf q9 qgs qgd characteristic drain-source breakdown voltage breakdown voltage temp. coeff. gate threshold voltage gate-source leakage , forward gate-source leakage , reverse drain-to-source leakage current static drain-source on-state resistance forward transconductance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain (. miller. ) charge min. 60 ? 2.0 ? ? ? - - - - - - -- - - - - -- - typ. ? 0.063 ? __ ? ? - - 32.6 1770 590 220 20 16 68 70 64 12.3 23.6 max. _ ? 4.0 100 -100 10 100 0.024 - 2300 680 255 40 40 140 140 83 - - units v v/c v na ua n u pf ns nc test condition vgs=ov,ll)=250ua !d=250ua see fig 7 vds=5v,ld=250na vos=20v vgs=-20v vds=60v vds=48v,tc=150c vgs=10v,id=25a (4) vns=30v,ln=25a (4) gs-uv,vds-zov,t -imnz dd-ouv,id-oua, g-9.1ii see fig 13 (4) (5) vds=48v,vgs=10v, id=50a see fig 6& fig 12 (4) (5) source-drain diode ratings and characteristics symbol is ism vsd trr qrr characteristic continuous source current pulsed-source current (1) diode forward voltage (4) reverse recovery time reverse recovery charge min. - ? ? ? - typ. - - - 85 0.24 max. 50 200 1.8 - - units a v ns uc test condition integral reverse pn-diode in the mosfet tj=25c,ls=50a,vr,s=ov tj=25c,lf=50a dif/dt=100a/|is (4) notes; (1) repetitive rating: pulse width limited by maximum junction temperature (2) l=0.4mh, ias=50a, vdd=25v, rg=27ii, starting tj=25c (3) isd<50a, di/dt<350a/us, vdd< bvdss, starting tj=25c (4) pulse test : pulse width = 250ns, duty cycle < 2% (5) essentially independent of operating temperature
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